Irving Eduardo Cortés Mestizo

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Contact:

gci@uaslp.mx

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Researcher profile

Irving Eduardo Cortés Mestizo

Personal Data:

SNI Level: I

ORBIS ID: e001055

Institutional Data:

Research Unit: Coordination for the Innovation and Application of Science and Technology

Office address: Av. Sierra Leona 550 Lomas 2a. Sección CP. 78210 San Luis Potosí

Email: irving.cortes@uaslp.mx

Artículo
- Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters. Journal of Crystal Growth. 589:-. 2022-01-01
- Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy. Materials Science in Semiconductor Processing. 142:-. 2022-01-01
- In-situ study of InAs quantum dots encapsulated in asymmetric (Al)GaAs confinement barriers. Revista Mexicana de Fisica. 68:-. 2022-01-01
- Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy. Thin Solid Films. 748:-. 2022-01-01
- Characterization of eigenstates interface-modulated in GaAs (631) multi-quantum well heterostructures. Journal of Applied Physics. 128:-. 2020-01-01