Miguel Ángel Vidal Borbolla

Advanced Search

Contact:

gci@uaslp.mx

Búsqueda Investigador

Researcher profile

Miguel Ángel Vidal Borbolla

Personal Data:

Academic Degree: PhD Degree

SNI Level: III

ORBIS ID: n70874

Institutional Data:

Affiliation: Faculty of Sciences

Office address: Av. Chapultepec 1570 Privadas del Pedregal CP. 78295 San Luis Potosí

Phone number: (+52) 4448262300

Ext.: 8415

Email: miguel.vidal@uaslp.mx

PhD Degree
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional
Master's Degree
Instituto Politécnico Nacional
Bachelor's Degree
Instituto Politécnico Nacional

Research Interests of Research Group

Synthesis of Semiconductors
Emitters and Detectors of UV, Visible and Infrared Radiation

Artículo
- Evaluation of nanoindentation characteristics of cubic InN epilayer grown by Molecular Beam Epitaxy. Thin Solid Films. 736:-. 2021-01-01
- Molecular dynamics simulation of cubic InxGa(1-x)N layers growth by molecular beam epitaxy. Computational Materials Science. 193:-. 2021-01-01
- Critical thickness as a function of the indium molar fraction in cubic InXGa1-XN and the influence in the growth of nanostructures. Materials Science in Semiconductor Processing. 115:-. 2020-01-01
- Elastic modulus and hardness of cubic GaN grown by molecular beam epitaxy obtained by nanoindentation. Thin Solid Films. 699:-. 2020-01-01
- Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions. Materials Science in Semiconductor Processing. 93:196-200. 2019-01-01
Capítulo de Libro
- Growth of InN and In-rich Group III-nitride alloys in cubic phase. Crystal Growth: Theory, Mechanisms and Morphology. 125-154. 2012-01-01