Andrei Yurievich Gorbatchev

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Contact:

gci@uaslp.mx

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Researcher profile

Andrei Yurievich Gorbatchev

Personal Data:

Academic Degree: PhD Degree

SNI Level: I

ORBIS ID: n70331

Institutional Data:

Affiliation: Faculty of Sciences

Office address: Av. Chapultepec 1570 Privadas del Pedregal CP. 78295 San Luis Potosí

Phone number: (+52) 4448250183

Ext.: 124

Email: andrei.gorbatchev@uaslp.mx

PhD Degree
Ioffe Physico-Technical Institute
Master's Degree
Saratov State University

Research Interests of Research Group

Emitters and Light Detectors Manufacturing

Artículo
- Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy. Materials Science in Semiconductor Processing. 142:-. 2022-01-01
- Analysis of thermodynamic conditions to grow GaAsP epitaxial layers by LPE on GaAs and GaP substrates. MRS Advances. -. 2020-01-01
- Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates. Physica Status Solidi (A) Applications and Materials Science. 217:-. 2020-01-01
- GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots. Physica E: Low-Dimensional Systems and Nanostructures. 124:-. 2020-01-01
- InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates. Physica E: Low-Dimensional Systems and Nanostructures. 95:22-26. 2018-01-01