Viatcheslav Andreevich Mishournyi

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Contacto:

gci@uaslp.mx

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Perfil del investigador

Viatcheslav Andreevich Mishournyi

Datos personales:

Grado Académico: Doctorado

Nivel SNI: II

ORBIS ID: n70526

Datos Institucionales:

Entidad de investigación: Instituto de Investigaciones en Comunicación Óptica

Teléfono: (+52) 4448250183

Correo electrónico: slava@iico.uaslp.mx

Doctorado en Semiconductores
Physico-Technical Institute A. F. Ioffe
Maestría en Electrónica
Electro-Technical Institute, Faculty of Electronic Technic. Leningrad

Intereses del grupo de investigación

Fabricación de Emisores y Detectores de Luz

Artículo
- Analysis of thermodynamic conditions to grow GaAsP epitaxial layers by LPE on GaAs and GaP substrates. MRS Advances. -. 2020-01-01
- Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates. Physica Status Solidi (A) Applications and Materials Science. 217:-. 2020-01-01
- Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell. Journal of Crystal Growth. 311:1650-1654. 2009-01-01
- Temperature dependence of photoluminescence oxygen-related deep levels in Al0.2Ga0.3In0.5P:Be grown by solid source molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26:1089-1092. 2008-01-01
- High quality of 830 nm material grown by solid source molecular beam epitaxy for laser device printing applications. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25:926-930. 2007-01-01